This morning, Aohai Technology stated on the interactive platform that the company has independently developed fast-charging gallium nitride products. On Friday, Jucan Optoelectronics announced that it plans to invest about 3.5 billion yuan to build an expansion project. The main products are Mini/MicroLED gallium nitride and gallium arsenide chips.
The reporter learned that the third-generation semiconductor materials are represented by gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond, which are the main materials in the 5G era. Although the third-generation semiconductors are still in the early stages of development, their market prospects are broad. According to the SiC and GaN Power Semiconductor Report 2020 released by Omdia, by the end of 2020, the global sales revenue of SiC and GaN power semiconductors is expected to be USD 854 million. The average annual double-digit growth rate for the next ten years will exceed US$5 billion by 2029.
Zhang Rujing, founder of SMIC, said before that the third-generation semiconductor IDM model is the mainstream. The reporter noted that among the third-generation semiconductor-related companies, China Resources Micro, a listed company on the Science and Technology Innovation Board, has adopted the IDM model.
The semi-annual report disclosed by China Resources Microelectronics shows that the company's existing research project "silicon-based gallium nitride power device design and process technology research and development" is expected to have a total investment of 244 million yuan, and a total of 10.8284 million yuan has been invested. The goal of the ongoing research project is to complete the research and development of 650V silicon-based gallium nitride devices and establish corresponding material production, product design, wafer manufacturing, and packaging and testing capabilities. It is understood that the products will be used in smart phone chargers, electric car chargers, computer adapters and other fields.
In addition, GaN chargers have the characteristics of high power, small size and high efficiency, which are the key to the breakthrough of super fast charging technology. Therefore, the agency expects that it will become the standard equipment of flagship mobile phones in the second half of the year and usher in explosive growth.
In the prospectus disclosed in February this year, in response to the "forward-looking technology and product upgrade research and development project," China Resources Micro stated that the company intends to address high barriers such as fast charging source control chips, smart audio power amplifiers and other details that will grow faster in the future. Carry out further research in different areas, including the development of audio power amplifier products of various power ranges from 2W to 100W and the development of GaN-based PD power control chips.
The reporter noticed that in this year’s semi-annual report, China Resources Micro is already developing a "GaN-based fast charging solution and chip research and development" project. The project plans to invest 39.48 million yuan. As of the semi-annual report, the cumulative investment is 745,100 yuan. The goal of the project is to adopt new GaN device control and drive technology to develop drive chips for GaN devices and fast charging source system solutions based on GaN devices.
In addition to GaN, for the third-generation semiconductor material-silicon carbide, China Resources Micro's first 6-inch commercial SiC wafer production line in China is officially mass-produced. On July 4 this year, during the Shanghai Munich Electronics Show, China Resources Microelectronics Power Devices Business Group officially launched 1200V and 650V industrial grade SiC Schottky diode series products into the market. The products can be widely used in solar energy, UPS, charging piles, and energy storage. And vehicle power supply and other fields.
It should be noted that the value chain of silicon carbide devices can be divided into substrate-epitaxial-wafer-devices. The cost of the substrate is up to 50%. The main reason is that the single crystal growth is slow and the quality is not stable enough, which also makes Silicon carbide is expensive and has not been widely promoted.
During the reporting period, China Resources Micro reached the "Agreement on Capital Increase and Share Expansion" through China Resources Microelectronics Holdings Co., Ltd. and the leading domestic silicon carbide epitaxial wafer company-Hantian Tiancheng Electronic Technology (Xiamen) Co., Ltd. (hereinafter referred to as "Hantian Tiancheng") After the capital increase, the company holds 3.2418% equity of Hantian Tiancheng.
Regarding the business layout of the third-generation semiconductor materials, the reporter contacted China Resources Micro for several times today, but no one answered the call.
In addition to China Resources Micro, Yangjie Technology also adopts the IDM business model. The semi-annual report this year shows that Yangjie Technology's products include silicon carbide SBD and silicon carbide JBS.
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