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STMicroelectronics automotive-grade MDmesh DM9 superjunction MOSFET improves silicon wafer energy efficiency

Sunday,Mar 31,2024

 March 28, 2024, China – The STPOWER MDmesh DM9 AG series of automotive-grade 600V/650V superjunction MOSFETs brings excellent energy efficiency and robustness to on-board chargers (OBC) and DC/DC converter applications using hardware and software switching topologies. Great sex.

 
These silicon-based transistors have excellent on-resistance RDS(on) per unit chip area and very low gate charge, combining very low energy loss with excellent switching performance. At the same time, the quality factor has become a new market benchmark. Compared with previous generation products, STMicroelectronics' latest MDmesh DM9 technology ensures a narrower gate-source threshold voltage (VGS(th)) distribution, resulting in sharper switching waveforms and lower turn-on and turn-off losses.
 
In addition, the new product also improves the body diode reverse recovery performance and uses a new optimization process to improve the overall robustness of the MOSFET. The low reverse recovery charge (Qrr) and fast recovery time (trr) of the body diode make the MDmesh DM9 AG series ideally suited for phase-shift zero-voltage switching topologies with high energy efficiency requirements.
 
The family offers a variety of through-hole and surface-mount packages to help designers achieve compact form factors, high power density and system reliability. TO-247 LL (long lead) is a popular through-hole package that simplifies the integration of devices in the design and uses mature packaging processes. In surface mount packages, H2PAK-2 (2-lead) and H2PAK-7 (7-lead) are suitable for bottom heat dissipation designs with heat dissipation substrates or PCB boards with thermal vias or other enhanced heat dissipation features. Both new products are also available in HU3PAK and ACEPACK™ SMIT top thermal surface mount packages.
 
The first product of the STPOWER MDmesh DM9 AG series, STH60N099DM9-2AG, is a 27A N-channel 600V device in H2PAK-2 package that complies with AEC-Q101 standards. The typical on-resistance RDS(on) is 76mΩ. STMicroelectronics will expand this product family to offer a complete range of products covering a wider range of rated currents and on-resistance RDS(on) from 23mΩ to 150mΩ.

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