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Micron Singapore Fab 10A flash memory factory completed expansion

Sunday,Aug 18,2019

 Memory giant Micron has announced the completion of the Fab 10A expansion of the Singapore NAND Flash plant. Micron CEO Sanjay Mehrotra said that the new plant will adjust capital expenditures and capacity planning according to market demand, and apply advanced 3D NAND process technology to further promote the transformation of key technologies such as 5G, artificial intelligence (AI) and autonomous driving. In addition, Micron will also increase its investment in Taiwan's DRAM factory, and the expansion of the Taichung plant is expected to be completed by the end of the year.

Micron held the opening ceremony of the expansion of the Fab 10A plant in Singapore on the 14th. More than 500 customers and suppliers, distributors, members of the Micron team and local government officials attended the event, including the system plant ASUS, the memory module factory Weigang, IC substrate factory Jingshuo, memory packaging and testing factory Licheng, IC channel business literature and other high-level executives of Micron in Taiwan also attended the ceremony.
Micron established the NAND Center of Excellence in Singapore in 2016, including the Fab 10 fab in Singapore, as well as the packaging and testing plants in Singapore and Malaysia. The Fab 10A plant will expand its capital expenditure according to market demand trends and is expected to begin in the second half of the year. Production, but the total production capacity of the Fab 10 plant is unchanged under the condition of technology and capacity conversion adjustment.
Micron said that the NAND Center of Excellence leverages its long-term investment in Singapore's infrastructure and technology expertise, and the expanded Fab 10A brings operational flexibility to the clean room space of the fab, facilitating the technological transformation of advanced process nodes for 3D NAND technology. . Micron's third-generation 96-layer 3D NAND has entered mass production. The fourth-generation 128-layer 3D NAND will shift from a floating gate to a replacement gate. Sanjay Mehrotra emphasizes that Micron's 3D NAND technology and storage solutions are Support the key to long-term growth while further promoting key technology transformations such as 5G, AI, and autonomous driving.
In Micron's DRAM layout, the Hiroshima Plant in Japan is the focus of research and development. In 2017, the DRAM Center of Excellence was established in Taiwan, and Taiwan became the largest DRAM production center in Micron. In recent years, Micron has been expanding its investment in Taiwan. In addition to the existing 12-inch factory, the Taichung plant will accelerate investment in the expansion of the new plant. It is planned to be completed before the end of the year, and the sealing and testing plant in the latter part of the Taichung plant will continue to expand its production capacity.
As Korean memory manufacturers Samsung and SK hynix began to evaluate the use of extreme ultraviolet (EUV) lithography technology in advanced DRAM processes, Micron also began to evaluate the cost-effectiveness of applying EUV technology to DRAM production, with DRAM processes from 1z nm. To the 1α, 1β, 1γ nanotechnology advancement process, the EUV technology solution will be selected at the appropriate process node.